FDV303N 数据手册
其他文档
FDV303N 7 pages
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: onsemi FDV303N
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 350mW
- Total Gate Charge (Qg@Vgs): 2.3nC@4.5V
- Drain Source Voltage (Vdss): 25V
- Input Capacitance (Ciss@Vds): 50pF@10V
- Continuous Drain Current (Id): 680mA
- Gate Threshold Voltage (Vgs(th)@Id): 1.5V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 450mΩ@4.5V,500mA
- Package: SOT-23(TO-236)
- Manufacturer: onsemi
- Series: -
- Packaging: Cut Tape (CT)
- Part Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
- Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Base Part Number: FDV30